Joseph D. Warner is a research engineer at the National Aeronautics and Space Administration's Glenn Research Center at Lewis Field in Cleveland, Ohio. His research interests are thin film oxides, cryogenic microwave devices, and new materials for communication applications. Currently, he is managing the development of a silicon germanium (SiGe) 60-GHz transceiver and infusion of SiGe into cryogenic receivers.

Mr. Warner earned his bachelor’s degree in physics from Washington University in 1975 and his master’s degree in physics from Carnegie-Mellon University in 1977, where he gained 4 additional years of experience as a graduate student. Mr. Warner’s graduate work was on low-temperature phase transitions of magnetic material.

Mr. Warner has performed deposition with an excimer laser of thin oxide films for high-temperature superconductor and ferroelectric phase shifter applications. He has been involved in the development of space-qualified high-temperature superconductor satellite communication systems, finding unique materials grown by laser ablation such as 2H-silicon carbide (SiC) and brookite (a form of titanium), localized growth of aluminum gallium arsenide (AlGaAs) by laser-assisted deposition, and carbonlike films. Mr. Warner won an award for technology transfer from the National Consortium of Federal Laboratories for transferring growth technology of high-temperature superconducting films by laser-pulsed deposition to industry, universities, and other national research laboratories.