Advanced Materials for Electron Emission Facility

1. Surface Analysis Instrument made by Physical Electronics, Inc. and capable of conducting surface elemental analysis and depth profiling using Auger Spectrometry, Secondary Ion Mass Spectrometry, and Photo-Electron Spectrometry.
2. In-house built apparatus for Angular Resolved Inverse Photo-Electron Spectroscopy for studies of electronic structure of crystals.
3. In-house built apparatus for studies of Angular Distributions of Secondary Electrons.
4. In-house built apparatus for studies of Field and Thermionic Emission from various surfaces.

Micro-Electronic Fabrication Facility

The Micro-Electronic Fabrication Facility of the Communications Technology Division at NASA Glenn Research Center is a class 100 clean room. The facility is equipped to provide extensive material characterization studies as well as develop the current state-of-the-art thin film devices, passive or active.

Microwave Vacuum Electronic Device Test Facility

No description.

RF/Microwave Design and Metrology Facility

The RF/Microwave Design and Metrology Facility located in the Electron Device Branch at NASA Glenn is primarily dedicated to the design and characterization of RF/Microwave devices, both passive and active. The facility is outfitted with the latest state-of-the-art high frequency electromagnetic design software suites such as Sonnet and High Frequency Structure Simulator (HFSS) as well as the circuit and system simulator Advanced Design System (ADS) by Agilent. These software design packages greatly enhance the design capabilities of scientists and engineers at NASA Glenn which enables them to develop state-of-the-art technologies required for NASA missions as well as commercial applications

Thin Film Optical Characterization Facility and Capabilities: Ellipsometry

The ellipsometer was used to characterize electronic materials and structures for high speed communications devices and circuits. The following examples show the gamut of our capabilities.
1. Calculation of the refractive index and thickness for a single layer dielectric film on a substrate over the spectral range of measurement, provided substrate optical constants are known. Examples of work done: SiO2, Si3N4, SiOxNy, perovskites, CaF2.
2. Calculation of real and imaginary parts of the refractive index of an absorbing single layer film on a substrate over the spectral range of measurement, provided substrate optical properties and film thickness are known. Example: CrSi2, ZnS.
3. Calculation of real and imaginary parts of the dielectric response of a bare reflecting material, possibly for use as a substrate. Examples: glass slide, SiC, stainless steel.
4. Multilayer modeling capabilities, using a regression algorithm. Parameters that can be varied to fit measured and experimental curves are: 1. Thickness of each layer; 2. Composition of each layer for a maximum of two components per layer (including void fraction, so changes in density from bulk conditions are also measurable). Examples: SixGe1-x/Si, AlxGa1-xAs/GaAs structures.